SiGe Comes of Age
نویسنده
چکیده
Since its first technology qualification in 1996 in IBM’s Advanced Semiconductor Technology Center (ASTC), Hopewell Junction, NY, silicon germanium (SiGe) has become the darling of the chip world, with new product and development agreement announcements made on nearly a daily basis. In this paper, we update progress made in SiGe since our 1Q97 IBM MicroNews article [1], tracing a number of business relationships and product developments. We discuss how SiGe technology has evolved from a high-performance bipolar technology (SiGe 5E) to a full BiCMOS technology (SiGe BiCMOS 5HP). This established a roadmap to continue improvements in the SiGe heterojunction bipolar transistor (HBT), coupling these enhancements with state-of-the-art ASIC CMOS technology and setting the world’s standard for high performance analog semiconductors with the announcement of SiGe BiCMOS 6HP. We also give a broad view of the market arena for SiGe technology and discuss key circuit announcements which are expected to set SiGe preeminence in the field.
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تاریخ انتشار 2000